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Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review
Authors
X. Zhang 1 , V.A. Spiridonov 1 , D.I. Panov 1 , I.M. Sosnin 2, 1 , A.E. Romanov 2, 1, 31 ITMO University, Kronverkskiy pr., 49, lit. A, Saint Petersburg, 197101, Russia
2 Togliatti State University, Belorusskaya str. 14, Togliatti 445020, Russia
3 Ioffe Institute, Polytechnicheskaya st., 26, St. Petersburg, 194021, Russia
Rev. Adv. Mater. Technol., 2023, vol. 5, no. 2, pp. 10–24
Abstract
Nowadays, gallium oxide (Ga2O3) as a wide bandgap semiconductor material is acquiring more and more attention in various practical areas. As a result, there has been a lot of efforts to fabricate and study bulk Ga2O3 material, Ga2O3 thin films, and Ga2O3 nanowires. For Ga2O3 films, there exists a variety of preparation methods such as metal-organic chemical vapor deposition, hydride vapor phase epitaxy, pulsed laser deposition, molecular beam epitaxy, frequency magnetron sputtering, atomic layer deposition, wet chemistry, and sol-gel. This concise review focuses on the preparation of Ga2O3 thin films by sol-gel methods. Sol-gel methods include dip-coating, spin-coating, spray pyrolysis, and drop casting technique. The details on the fabrication of β-Ga2O3 thin films by sol-gel method are summarized and prospected. Polymorphism, structure and properties of sol-gel prepared Ga2O3 films are discussed.
Keywords
Sol-gel; Ga2O3; Thin filmFoundings
Ministry of Science and Higher Education of the Russian Federation: agreement No. 075-15-2021-1349
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Volume 5, No 2
pages 10-24
History
Receive Date:
29
May
2023
Accepted Date:
10
June
2023
Available online:
30
June
2023
© 2023 ITMO University.
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license