ISSN 2687-0568
Russian

Fabrication and Testing of Substrates Made from Bulk Gallium Oxide Crystals by the Cleavage Method

Authors
D.A. Bauman 1 , D.I. Panov 1 , V.A. Spiridonov 1 , V.V. Lundin 2 , S.N. Rodin 2 , N.D. Prasolov 2 , A.L. Kolesnikova 1, 3

1 Institute of Advanced Data Transfer Systems, ITMO University, Kronverksky Pr. 49, bldg. A, St. Petersburg, 197101, Russia

2 Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

3 Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, Bolshoy 61 VO, St. Petersburg 199178, Russia

10.17586/2687-0568-2022-4-3-47-51
Rev. Adv. Mater. Technol., 2022, vol. 4, no. 3, pp. 47–51
Abstract

The paper proposes a method for fabricating gallium oxide substrates from bulk β-Ga2O3 crystals by the cleavage method. Layers of β-Ga2O3, β-(AlxGa1–x)2O3 and structures of β-Ga2O3/β-(AlxGa1–x)2O3 are grown on the prepared substrates by the MOCVD method. The surface morphology of the layers and growth regimes are analyzed. The fundamental possibility of using gallium oxide substrates obtained by the cleavage method for the subsequent epitaxy is shown.

Keywords
Gallium oxide; Bulk crystal; Substrates; MOCVD; Surface morphology
Foundings

Scientific school: NSh-5082.2022.4 (Agreement No. 075-15-2022-765 dated 12.05.2022)

RFBR: project No. 19-52-80033 BRICS_t.

References
Volume 4, No 3
pages 47-51
Files
History
Receive Date:  24 September 2022
Accepted Date:  26 September 2022
Available online:  30 September 2022
© 2022 ITMO University.
This is an open access article under the terms
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