Laser Processing of Gallium Oxide Crystals in the Preparation of Samples for Microelectronics

Authors

D.I. Panov ¹ , V.A. Spiridonov ¹ , O.S. Vasilev ² , P.A. Bogdanov ¹ , D.A. Bauman ¹ , A.E. Romanov ^1, ³

¹ ITMO University, Kronverkskiy pr., 49, lit. A, St. Petersburg, 197101, Russia

² LLC Laser Center, Marshala Tukhachevskogo str., 22, «Sova» business-center, office 228-231, St. Petersburg, 195067, Russia

³ Changchun University of Science and Technology, Weixing Rd.7089, Changchun, 130022, China

10.17586/2687-0568-2025-7-3-198-202

Rev. Adv. Mater. Technol., 2025, vol. 7, no. 3, pp. 198–202

Abstract

The paper presents the results of a study on an approach for sample preparation from bulk gallium oxide crystals using ablation laser cutting. The study was carried out using a «MicroSet» setup based on a fiber laser source with a wavelength of 1.064 μm and a power of 30 W. The possibility of processing material using a laser beam has been shown, the optimal trochoid width and pulse duration were selected, as well as the energy characteristics of the laser source and focusing optical system. The fundamental possibility of cutting gallium oxide crystals in different directions, regardless of the internal structure, the orientation of atoms and their bonds in the crystal lattice, has been shown.

Keywords

Gallium oxide; Laser ablation; Substrates; Sample preparation

Foundings

Russian Science Foundation: 24-12-00229; Foreign Experts Key Support Project (Northeast Special Project): D20240015

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Volume 7, No 3

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History

Receive Date: 11 September 2025

Accepted Date: 29 September 2025

Available online: 30 September 2025

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