RAMT

Authors

A.O. Efimov ^1, ² , S.N. Rodin ³ , W.V. Lundin ³ , A.Yu. Ivanov ¹ , A.V. Sakharov ^2, ³ , D.I. Panov ¹ , V.A. Spiridonov ¹ , P.A. Bogdanov ¹ , A.F. Tsatsulnikov ² , D.A. Bauman ⁴

¹ Institute of Advanced Data Transfer Systems, ITMO University, Kronverkskiy pr., 49, lit. A, St. Petersburg, 197101, Russia

² Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences

³ Ioffe Institute, Politekhnicheskaya, 26, St. Petersburg, 194021, Russia

⁴ Institute of Advanced Data Transfer Systems, ITMO University, Kronverkskiy pr., 49, bldg. A, St. Petersburg, 197101, Russia

10.17586/2687-0568-2025-7-3-141-147

Rev. Adv. Mater. Technol., 2025, vol. 7, no. 3, pp. 141–147

Abstract

The article considers homoepitaxy of beta gallium oxide layers doped with silicon grown by metal organic chemical vapor deposition (MOCVD). Epitaxial growth was carried out on substrates of iron doped gallium oxide. Epitaxial layers at different rates of silicon doping from a diluted monosilane and at different temperatures were obtained. The crystal quality of epitaxial layers was analyzed, as well as mobility of electrons and conductivity were measured. The possibility of controlling the electrical properties (such as electron mobility and conductivity) of homoepitaxial gallium oxide layers doped with silicon during growth by the MOCVD method was demonstrated.

Keywords

Gallium oxide; MOCVD; Homoepitaxy; Silicone doping; Electron mobility; Conductivity

Foundings

Russian Science Foundation: 24-12-00229

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Silicon Doping of Epitaxial Layers of Gallium Oxide by MOCVD

Authors

Abstract

Keywords

Foundings