ISSN 2687-0568

Electrospun Nanofibers Based on Gallium Oxide: Fabrication and Characterization

Authors
A.V. Rybalka 1 , P.P. Snetkov 1 , S.N. Morozkina 1 , A.E. Romanov 1

1 Institute of Advanced Data Transfer Systems, ITMO University, Kronverkskiy pr., 49, bldg. A, Saint Petersburg, 197101, Russia

Rev. Adv. Mater. Technol., 2025, vol. 7, no. 2, pp. 105–113
Abstract

Currently, nanofibrous semiconductor materials having large surface area and wide bandgap are in demand for modern technological processes, from fabrication of optoelectronic devices to photocatalytic facilities. Ga2O3 is the most suitable semiconductor for such materials due to its unique properties, wide bandgap equal to ~4.8 eV, and high acid resistance. In this study, Ga2O3-nanofibers were fabricated by electrospinning technique from the polymer spinning solutions based on polyvinylpyrrolidone. The fabrication procedure consists of two stages: electrospinning of nanofibers loaded with the gallium oxide precursor and annealing of nanofibers obtained for polymer removal and Ga2O3 formation. Influence of annealing temperature on the fiber morphology and its optic-electronic properties were demonstrated. Results obtained provide experimental basis for further fabrication of metal-oxide nanofibers, including doped ones, for high effective devices

Keywords
Electrospinning; Nanofibers; Gallium oxide; Size distribution; Bandgap
Foundings

Ministry of Science and Higher Education of the Russian Federation: FSER-2025-0005

References
Volume 7, No 2
pages 105-113
History
© 2025 ITMO University.
This is an open access article under the terms
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