Formation of Interfaces in Direct Bonded Heteropolytype SiC Structures Mediated with Liquid and Vapor Phase of Silicon

Authors

S.Iu. Priobrazhenskii ^1, ² , M.G. Mynbaeva ¹ , A.V. Myasoedov ¹ , E.V. Gushchina ¹ , D.G. Amelchuk ¹ , S.P. Lebedev ¹ , A.A. Lebedev ¹

¹ Ioffe Institute, Polytechnicheskaya st., 26, St. Petersburg, 194021, Russia

² Saint Petersburg Electrotechnical University "LETI", Professora Popova st., 5, St. Petersburg, 197022, Russia

10.17586/2687-0568-2025-7-1-18-23

Rev. Adv. Mater. Technol., 2025, vol. 7, no. 1, pp. 18–23

Abstract

It is shown that heteropolytype silicon carbide structures can be obtained by direct bonding of wafers of different SiC polytypes by high-temperature treatment in vacuum. Heteroepitaxial 3C-SiC layers grown by the CVD method on a Si substrate were successfully transferred to 6H-SiC wafers. It was found that nanometer-thick bonding layers formed at the 3C-SiC/6H-SiC interface were the layers of recrystallized melt originating in a meltdown of the Si substrate of starting 3C-SiC/Si specimens. This example of transferring is a promising way for producing 3C-SiC/6H-SiC template for growing homoepitaxial 3C-SiC films of device quality. Feasibility of direct bonding of SiC single-crystal wafers in a silicon vapor environment also demonstrated. The motivation for these studies is development of prospective power devices on the base of 4H-SiC/6H-SiC heteropolytype junctions. It is shown that a necessary condition for bonding is а gap capable of providing vapor transport at the interface between the wafers. The gap was obtained by preliminary self-structuring of the surface of bonded SiC wafers with their annealing in vacuum.

Keywords

Silicon carbide; Direct wafer bonding; Heteropolytype structures; Silicon; Liquid and vapor phase

Foundings

Russian Science Foundation: 24-22-00232

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History

Receive Date: 10 March 2025

Accepted Date: 24 March 2025

Available online: 31 March 2025

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