Electrical Characteristics and Peculiarities of Formation of Type II InAsSb/InAsSbP Heterostructures

Authors

I.D. Kirilenko ¹ , M.S. Ruzhevich ¹ , N.L. Bazhenov ² , M.V. Tomkovich ² , V.V. Romanov ² , K.D. Moiseev ² , K.D. Mynbaev ^1, ²

¹ Institute of Advanced Data Transfer, ITMO University, 49 Kronverkskiy, Saint-Petersburg 197101, Russia

² Ioffe Institute, 26 Polytechnicheskaya, Saint-Petersburg 194021, Russia

10.17586/2687-0568-2024-6-4-178-182

Rev. Adv. Mater. Technol., 2024, vol. 6, no. 4, pp. 178–182

Abstract

This article presents the results of a study of current-voltage (I–V) characteristics of InAsSb/InAsSbP heterostructures with an InSb content in the InAsSb active region 0.06 and 0.09. Using these results, the results of electroluminescence studies, and the data of energy-dispersive X-ray spectroscopy obtained for InAsSbP films grown on InAs(Sb), it is shown that the peculiarities of formation of the InAsSb/InAsSbP heterointerface via the method of metalorganic vapor phase epitaxy can lead to the development of a type II heterojunction. At temperatures T ≤ 170 K, this is manifested in specific values of both the energy of electroluminescence spectrum maximum and the I–V cutoff value

Keywords

Solid solutions; InAsSbP; Electroluminescence; Heterostructures

References

1.    G.F. Rangel, L.D. de Leon Martínez, L.S. Walter, B. Mizaikoff, Recent advances and trends in mid-infrared chem/bio sensors, TrAC Trends Analyt. Chem., 2024, vol. 180, art. no. 117916.
2.    M. Hlavatsch, B. Mizaikof, Advanced mid-infrared lightsources above and beyond lasers and their analytical utility, Analyt. Sci., 2022, vol. 38, pp. 1125-1139.
3.    D. Jung, S. Bank, M.L. Lee, D. Wasserman, Next-generation mid-infrared sources, J. Opt., 2017, vol. 19, art. no. 123001.
4.    M.S.Ruzhevich, Investigation of Radiation Recombination Channels in Long-Wavelength InAs/InAsSb/InAsSbP LED Heterostructures, Rev. Adv. Mater. Sci. Technol., 2021, vol. 3, no. 4, pp. 24-28.
5.    M.S.Ruzhevich, K.D. Mynbaev, N.L. Bazhenov, V.V. Romanov, K.D. Moiseev, Electroluminescence of narrow-gap InAs/InAs1-ySby/InAsSbP heterostructures with y=0.07-0.12, St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2024, vol. 17, no. 1.1, pp. 77-82.
6.    V.V. Romanov, K.D. Moiseev, Features of the Energy Band Structure of the InAsSbP Epilayer Deposited on a Surface of the InAs1-ySby Solid Solution, Phys. Solid State, 2023, vol. 65, no. 10, pp. 1634-1641.
7.    K.D. Moiseev, V.V. Romanov, Band Diagram of the InAs1-ySby/InAsSbP Heterojunction in the Composition Range y № 0.2, Phys. Solid State, 2021, vol. 63, no. 4, pp. 595-602.
8.    V.V. Romanov, E.V. Ivanov, K.D. Moiseev, InAs(1-y) Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09-0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4-6 μm, Phys. Sol. State, 2019, vol. 61, no. 10, pp. 1699-1706.
9.    M. Sopanen, T. Koljonen, H. Lipsanen, T. Tuomi, Growth of GaInAsSb using tertiarybutylarsine as arsenic source, J. Cryst. Growth, 1994, vol. 145, no. 1-4, pp. 392-497.
10.    K.D. Mynbaev, N.L. Bazhenov, A.A. Semakova, A.V. Chernyaev, S.S. Kizhaev, N.D. Stoyanov, V.E. Bougrov, H. Lipsanen, Kh.M. Salikhov, Spontaneous and stimulated emission in InAsSb-based LED heterostructures, Infr. Phys. Technol., 2017, vol. 85, pp. 246-250.
11.    A.A. Semakova, N.L. Bazhenov, K.D. Mynbaev, A.V. Chernyaev, S.S. Kizhaev, N.D. Stoyanov, Study of the Current-Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2-300 K Temperature Range, Semiconductors, 2021, vol. 55, no. 6, pp. 557-561.
12.    D. Drouin, A.R. Couture, D. Joly, X. Tastet, V. Aimez, R. Gauvin, CASINO V2.42 - A Fast and Easy-to-use Modeling Tool for Scanning Electron Microscopy and Microanalysis Users, Scanning, 2007, vol. 29, pp. 92-101.
13.    V.V. Romanov, E.V. Ivanov, K.D. Moiseev, Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure, Phys. Solid State, 2020, vol. 62, no. 11, pp. 2039-2044.
14.    T. Smołka, M. Motyka, V.V. Romanov, K.D. Moiseev, Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure, Materials, 2022, vol. 15, no. 4, art. no. 1419.
15.    D.D. Firsov, O.S. Komkov, V.A. Solov'ev, P.S. Kop'ev, S.V. Ivanov, Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range, J. Phys. D: Appl. Phys., 2016, vol. 49, no. 28, art. no. 285108.

Volume 6, No 4

pages 178-182

Files

full text article

abstract

XML file

History

Receive Date: 22 November 2024

Accepted Date: 25 November 2024

Available online: 30 December 2024

© 2024 ITMO University.
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license