Structural Properties of β-Ga2O3 Thin Films Obtained on Different Substrates by Sol-Gel Method
Rev. Adv. Mater. Technol., 2023, vol. 5, no. 1, pp. 26–32
Abstract
β-Ga2O3 thin films were obtained by the sol-gel method on sapphire and quartz substrates, as well as on Cu-O buffer layers. It was shown that the sol-gel method allowed to obtain β-Ga2O3 thin films with good optical and structural properties by using X-ray diffraction, scanning electron microscopy and optical spectroscopy. The energy of the optical band gap of Ga2O3 films calculated by the Tauc plot varied from 4.39 to 4.59 eV.
Keywords
β-Ga2O3; UWB semiconductor; XRD; Thin film; Sol-gelFoundings
Scientific school: No. 5082.2022.4
References
Volume 5, No 1
pages 26-32
History
Receive Date:
10
March
2023
Accepted Date:
27
March
2023
Available online:
31
March
2023
© 2023 ITMO University.
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license