ISSN 2687-0568
Russian

The Electrical Properties of Schottky Barrier Diode Structures Based on HVPE Grown Sn Dopped Ga2O3 Layers

Authors
A.Yu. Ivanov 1 , A.V. Kremleva 1 , Sh.Sh. Sharofidinov 2

1 Institute of Advanced Data Transfer Systems, ITMO University, Kronverksky Pr. 49, bldg. A, St. Petersburg, 197101, Russia

2 Sector of Solid State Electronics, Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, St. Petersburg, 194021, Russia

https://doi.org/10.17586/2687-0568-2022-4-1-33-38
Rev. Adv. Mater. Technol., 2022, vol. 4, no. 1, pp. 33–38
Abstract

We report on the analysis of the electrical properties of Schottky barrier diode structures based on gallium oxide (Ga2O3). Ga2O3 has been grown by chloride-hydride vapor phase epitaxy on Al2O3 substrate. Samples with different amounts of Sn impurity are experimentally characterized. Surface and cross-sectional scanning electron microscopy images, X-ray diffraction patterns and current-voltage characteristics of Ga2O3 layers both with and without contact pads are presented. The value of the Ga2O3 optimal doping is determined and the parameters of the surface treatment that is performed before the contact pads deposition are established.

Keywords
UWBG semiconductors; Gallium oxide; Scanning electron microscopy; X-ray diffraction; Schottky diode
Foundings

Russian Science Foundation: project No. 21-79-00211

References
Volume 4, No 1
pages 33-38
Files
History
Receive Date:  21 February 2022
Accepted Date:  10 March 2022
Available online:  31 March 2022
© 2022 ITMO University.
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license