ISSN 2687-0568
Russian

Volume 3 No 2 2021

Published at: 30.06.2021

1.

Current State of Ga2O3-Based Electronic and Optoelectronic
Devices. Brief Review
A.A. Petrenko, Ya.N. Kovach, D.A. Bauman, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov
Abstract (PDF, 531.19 kB) Full-text paper (PDF, 508.24 kB)
pages 1-26
2.

Early Attainments of Porous Silicon Carbide Technology: a Bibliographic Digest
M.G. Mynbaeva
Abstract (PDF, 390.70 kB) Full-text paper (PDF, 204.57 kB)
pages 27-38
3.

A Review on Accommodation Processes in Non-Equilibrium Grain Boundaries
D.V. Bachurin, A.A. Nazarov
Abstract (PDF, 291.29 kB) Full-text paper (PDF, 290.08 kB)
pages 39-52
4.

Collective Migration of Low-Angle Tilt Boundaries Near Crack Tips in Nanocrystalline Metals under Fatigue Load
Ya.V. Konakov, A.G. Sheinerman
Abstract (PDF, 161.71 kB) Full-text paper (PDF, 440.89 kB)
pages 53-59
5.

Nuclear Geometry: from Silicon to Argon
Alexander I. Melker
Abstract (PDF, 181.94 kB) Full-text paper (PDF, 10.59 Mb)
pages 60-86