RAMT

Авторы

Nguyen Van Tuyen ^1, ² , А.Л. Колесникова ² , А.Е. Романов ¹

¹ ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia

² Sao Do University, No 24, Thai Hoc 2, Sao Do Ward, Chi Linh City, Hai Duong, Vietnam

10.17586/2687-0568-2025-7-2-124-140

Rev. Adv. Mater. Technol., 2025, vol. 7, no. 2, pp. 124–140

Аннотация

В данной работе мы исследуем влияние деформаций, наведённых аксиально-симметричными квантовыми точками цилиндрической, полусферической и конической форм в полупроводниковой III-нитридной нанопроволоке, на зонную структуру материала нанопроволоки. Для изучения упругих свойств квантовых точек использовалась модель упругого включения с собственной деформацией. Для учета влияния свободной поверхности проволоки на упругие поля квантовых точек были получены аналитические решения соответствующих граничных задач. Метод возмущений k·p применялся для оценки роли наведённых деформаций в изменении зонной структуры материала. Показано, что изменение ширины запрещенной зоны явно зависит от формы внедренной квантовой точки. Было исследовано влияние наведённых квантовыми точками деформаций на электрополяризацию материала, обладающего пьезоэлектрическими свойствами. Обнаружено, что наибольший скачок плотности электрического заряда достигается вблизи вершины конического включения.

Ключевые слова

III-нитридные полупроводниковые нанопроволоки; квантовые точки; упругие поля; запрещенная зона; электрополяризация

Финансирование

Ministry of Science and Higher Education of the Russian Federation: FSER-2025-0005.

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Влияние упругого поля квантовых точек на электронную зонную структуру III-нитридных проволочных полупроводников

Авторы

Аннотация

Ключевые слова

Финансирование