- Главная
- / Выпуски
- / Том 5 № 2 2023
- / 2
Приготовление тонких пленок Ga2O3 золь-гель методом — краткий обзор
Авторы
X. Zhang 1 , В.А. Спиридонов 1 , Д.Ю. Панов 1 , И.М. Соснин 2, 1 , А.Е. Романов 2, 1, 31 Институт перспективных систем передачи данных, Университет ИТМО, Кронверкский пр. 49а, 197101 Санкт-Петербург, Россия
2 Тольяттинский государственный университет, Белорусская ул., д. 14, Тольятти, 445020, Россия
3 Физико-технический институт им. А.Ф. Иоффе, Политехническая ул., д. 26, Санкт-Петербург, 194021, Россия
Rev. Adv. Mater. Technol., 2023, vol. 5, no. 2, pp. 10–24
Аннотация
В настоящее время оксид галлия (Ga2O3) как широкозонный полупроводниковый материал привлекает все большее внимание в различных практических областях. В связи с этим было предпринято много усилий по изготовлению и исследованию его объемного кристалла, тонких пленок и нанопроволок. Для пленок Ga2O3 существует множество методов подготовки, таких как осаждение металлорганических соединений из газообразной фазы, хлорид-гидридная газофазная эпитаксия, импульсное лазерное напыление, молекулярно-пучковая эпитаксия, радиочастотное магнетронное напыление, атомно-слоевое осаждение, мокрая химия и золь-гель. Этот краткий обзор посвящен приготовлению тонких пленок Ga2O3 золь-гель методами. Золь-гель методы включают нанесение покрытия погружением, центрифугирование, спрей-пиролиз и метод капельного литья. В работе обобщены и проанализированы детали изготовления тонких пленок β-Ga2O3 золь-гель методом. Обсуждаются полиморфизм, структура и свойства полученных методом золь-гель пленок Ga2O3.
Ключевые слова
золь-гель; Ga2O3; тонкая пленкаФинансирование
Министерство науки и высшего образования Российской Федерации: соглашение № 075-15-2021-1349
- N. Stath, V. Härle, J. Wagner. The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides, Materials Science and Engineering: B, 2001, vol. 80, no. 1–3, pp. 224–231.
- K.A. Denault, M. Cantore, S. Nakamura, S.P. DenBaars, R. Seshadri. Efficient and stable laser-driven white lighting, AIP Advances, 2013, vol. 3, no. 7, art. no. 072107.
- J. Millán, P. Godignon, X. Perpiñà, A. Pérez-Tomás, J. Rebollo. A survey of wide bandgap power semiconductor devices, IEEE Transactions on Power Electronics, 2014, vol. 29, no. 5, pp. 2155–2163.
- Y. Li, X. Xiu, Z. Xiong, X. Hua, Z. Xie, P. Chen, B. Liu, T. Tao, R. Zhang, Y. Zheng, Single-crystal GaN layer converted from β-Ga2O3 films and its application for free-standing GaN, CrystEngComm, 2019, vol. 21, no. 8, pp. 1224–1230.
- S. Fujita, Wide-bandgap semiconductor materials: For their full bloom, Japanese Journal of Applied Physics, 2015, vol. 54, no. 3, art. no. 030101.
- B.J. Baliga, Fundamentals of power semiconductor devices, Springer New York, NY, 2008.
- H. Shiomi, Y. Nishibayashi, N. Fujimori, Field-effect transistors using boron-doped diamond epitaxial films, Japanese Journal of Applied Physics, 1989, vol. 28, no. 12A, pp. L2153–L2154.
- L. Boisbaudran, On the chemical and spectroscopic characters of a new metal (gallium), The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 1875, vol. 50, no. 332, pp. 414–416.
- R. Roy, V.G. Hill, E.F. Osborn, Polymorphism of Ga2O3 and the System Ga2O3–H2O, Journal of the American Chemical Society, 1952, vol. 74, no. 3, pp. 719–722.
- T. Oshima, T. Okuno, S. Fujita, Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors, Japanese Journal of Applied Physics, 2007, vol. 46, no. 11R, pp. 7217–7220.
- T. Miyata, T. Nakatani, T. Minami, Manganese-activated gallium oxide electroluminescent phosphor thin films prepared using various deposition methods, Thin Solid Films, 2000, vol. 373, no. 1–2, pp. 145–149.
- J. Wang, L. Ye, X. Wang, H. Zhang, L. Li, C. Kong, W. Li, High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector, Journal of Alloys and Compounds, 2019, vol. 803, pp. 9–15.
- H.H. Tippins, Optical absorption and photoconductivity in the band edge of β-Ga2O3, Physical Review, 1965, vol. 140, no. 1A, pp. A316–A319.
- S.I. Stepanov, V.I. Nikolaev, V.E. Bougrov, A.E. Romanov, Gallium Oxide: Properties and applications - a Review, Reviews on Advanced Materials Science, 2016, vol. 44, no. 1, pp. 63–86.
- P.N. Butenko, D.I. Panov, A.V. Kremleva, D.A. Zakgeim, A.V. Nashchekin, I.G. Smirnova, D.A. Bauman, A.E. Romanov, V.E. Bougrov, Czochralski grown (AlxGa1–x)2O3 crystals with variable Al content, 2019, vol. 42, no. 6, pp. 802–807.
- S. Masuya, K. Sasaki, A. Kuramata, S. Yamakoshi, O. Ueda, M. Kasu, Characterization of crystalline defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography, Japanese Journal of Applied Physics, 2019, vol. 58, no. 5, art. no. 055501.
- X. Du, Z. Li, C. Luan, W. Wang, M. Wang, X. Feng, H. Xiao, J. Ma, Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD, Journal of Materials Science, 2015, vol. 50, no. 8, pp. 3252–3257.
- F.B. Zhang, K.Saito, T. Tanaka, M. Nishio, Q.X. Guo, Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition, Journal of Crystal Growth, 2014, vol. 387, pp. 96–100.
- A.S. Pratiyush, Z. Xia, S. Kumar, Y. Zhang, C. Joishi, R. Muralidharan, S. Rajan, D.N. Nath, MBE-grown β-Ga2O3-based Schottky UV-C photodetectors with rectification ratio ~107, IEEE Photonics Technology Letters, 2018, vol. 30, no. 23, pp. 2025–2028.
- K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi, MBE grown Ga2O3 and its power device applications, Journal of Crystal Growth, 2013, vol. 378, pp. 591–595.
- X. Zhang, D. Jiang, M. Zhao, H. Zhang, M. Li, M. Xing, Ji. Han, A. E. Romanov, The effect of annealing temperature on Ga2O3 film properties, Journal of Physics: Conference Series, 2021, vol. 1965, no. 1, art. no. 012066.
- S. Mobtakeri, Y. Akaltun, A. Özer, M. Kılıç, E.Ş. Tüzemen, E. Gür, Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing, Ceramics International, 2021, vol. 47, no. 2, pp. 1721–1727.
- H. Ma, H. Lu, T. Wang, J. Yang, X. Li, J. Chen, J. Tao, J. Zhu, Q. Guo, D.W. Zhang, Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition, Journal of Materials Chemistry C, 2018, vol. 6, no. 46, pp. 12518–12528.
- X. Li, H.-L. Lu, H.-P. Ma, J.-G. Yang, J.-X. Chen, W. Huang, Q. Guo, J.-J. Feng, D.W. Zhang, Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition, Current Applied Physics, 2019, vol. 19, no. 2, pp. 72–81.
- L.B. Cheah, R.A.M. Osman, P. Poopalan, Ga2O3 thin films by sol-gel method its optical properties, AIP Conference Proceedings, 2020, vol. 2203, no. 1, art. no. 020028.
- Y. Zhu, X. Xiu, F. Cheng, Y. Li, Z. Xie, T. Tao, P. Chen, B. Liu, R. Zhang, Y. Zheng, Growth and nitridation of β-Ga2O3 thin films by sol-gel spin-coating epitaxy with post-annealing process, Journal of Sol-Gel Science and Technology, 2021, vol. 100, no. 1, pp. 183–191.
- M. Bae, S. Kim, J. Baek, J. Koh, Comparative study of high-temperature annealed and RTA process β-Ga2O3 thin film by sol–gel process, Coatings, 2021, vol. 11, no. 10, art. no. 1220.
- Z. Galazka, β-Ga2O3 for wide-bandgap electronics and optoelectronics, Semiconductor Science and Technology, 2018, vol. 33, no. 11, art. no. 113001.
- F. Boschi, Growth and investigation of different gallium oxide polymorphs, Doctoral thesis, Universita' degli studi di Parma, 2017.
- H.Y. Playford, A.C. Hannon, E.R. Barney, R.I. Walton, Structures of uncharacterised polymorphs of gallium oxide from total neutron diffraction, Chemistry – A European Journal, 2013, vol. 19, no. 8, pp. 2803–2813.
- H.Y. Playford, A.C. Hannon, M.G. Tucker, D.M. Dawson, S.E. Ashbrook, R.J. Kastiban, J. Sloan, R.I. Walton, Characterization of structural disorder in γ-Ga2O3, The Journal of Physical Chemistry C, 2014, vol. 118, no. 29, pp. 16188–16198.
- I. Cora, F. Mezzadri, F. Boschi, M. Bosi, M. Čaplovičová, G. Calestani, I. Dódony, B. Pécz, R. Fornari, The real structure of ε-Ga2O3 and its relation to κ-phase, CrystEngComm, 2017, vol. 19, no. 11, pp. 1509–1516.
- M. Marezio, J.P. Remeika, Bond lengths in the α‐Ga2O3 structure and the high‐pressure phase of Ga2−xFexO3, The Journal of Chemical Physics, 1967, vol. 46, no. 5, pp. 1862–1865.
- V.M. Bermudez, The structure of low-index surfaces of β-Ga2O3, Chemical Physics, 2006, vol. 323, no. 2–3, pp. 193–203.
- S. Yoshioka, H. Hayashi, A. Kuwabara, F. Oba, K. Matsunaga, I Tanaka, Structures and energetics of Ga2O3 polymorphs, Journal of Physics: Condensed Matter, 2007, vol. 19, no. 34, art. no. 346211.
- K. Akaiwa, S. Fujita, Electrical conductive corundum-structured α-Ga2O3 thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition, Japanese Journal of Applied Physics, 2012, vol. 51, no. 7R, art. no. 070203.
- S. Lee, K. Akaiwa, S. Fujita, Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates, Physica Status Solidi C, 2013, vol. 10, no. 11, pp. 1592–1595.
- S. Fujita, K. Kaneko, Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films, Journal of Crystal Growth, 2014, vol. 401, pp. 588–592.
- X. Chen, X. Yang, D. Zhou, S. Yang, F. Ren, H. Lu, K. Tang, S. Gu, R. Zhang, Y. Zheng, J. Ye, Solar-blind photodetector with high avalanche gains and bias-tunable detecting functionality based on metastable phase α-Ga2O3/ZnO isotype heterostructures, ACS Applied Materials & Interfaces, 2017, vol. 9, no. 42, pp. 36997–37005.
- V. Gottschalch, S. Merker, S. Blaurock, M. Kneiß, U. Teschner, M. Grundmann, H. Krautscheid, Heteroepitaxial growth of α-, β-, γ- and κ-Ga2O3 phases by metalorganic vapor phase epitaxy, Journal of Crystal Growth, 2019, vol. 510, pp. 76–84.
- H. Peelaers, C.G. Van de Walle, Brillouin zone and band structure of β-Ga2O3, Physica Status Solidi B, 2015, vol. 252, no. 4, pp. 828–832.
- Z. Galazka, K. Irmscher, R. Uecker, R. Bertram, M. Pietsch, A. Kwasniewski, M. Naumann, T. Schulz, R. Schewski, D. Klimm, M. Bickermann, On the bulk β-Ga2O3 single crystals grown by the Czochralski method, Journal of Crystal Growth, 2014, vol. 404, pp. 184–191.
- E.G. Víllora, K. Shimamura, T. Ujiie, K. Aoki, Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature, Applied Physics Letters, 2008, vol. 92, no. 20, art. no. 202118.
- C. Janowitz, V. Scherer, M. Mohamed, A. Krapf, H. Dwelk, R. Manzke, Z. Galazka, R. Uecker, K. Irmscher, R. Fornari, M. Michling, D. Schmeißer, J.R. Weber, J.B. Varley, C.G. Van de Walle, Experimental electronic structure of In2O3 and Ga2O3, New Journal of Physics, 2011, vol. 13, no. 8, art. no. 085014.
- J.B. Varley, J.R. Weber, A. Janotti, C.G. Van de Walle, Oxygen vacancies and donor impurities in β-Ga2O3, Applied Physics Letters, 2010, vol. 97, no. 14, art. no. 142106.
- Z. Galazka, Growth of bulk β-Ga2O3 single crystals by the Czochralski method, Journal of Applied Physics, 2022, vol. 131, no. 3, art. no. 031103.
- Z. Galazka, R. Uecker, K. Irmscher, M. Albrecht, D. Klimm, M. Pietsch, M. Brützam, R. Bertram, S. Ganschow, R. Fornari, Czochralski growth and characterization of β-Ga2O3 single crystals, Crystal Research and Technology, 2010, vol. 45, no. 12, pp. 1229–1236.
- J. Zhang, B. Li, C. Xia, G. Pei, Q. Deng, Z. Yang, W. Xu, H. Shi, F. Wu, Y. Wu, J. Xu, Growth and spectral characterization of β-Ga2O3 single crystals, Journal of Physics and Chemistry of Solids, 2006, vol. 67, no. 12, pp. 2448–2451.
- N. Ueda, H. Hosono, R. Waseda, H. Kawazoe, Anisotropy of electrical and optical properties in β-Ga2O3 single crystals, Applied Physics Letters, 1997, vol. 71, no. 7, pp. 933–935.
- E.G. Víllora, M. Yamaga, T. Inoue, S. Yabasi, Y. Masui, T. Sugawara, T. Fukuda, Optical spectroscopy study on β-Ga2O3, Japanese Journal of Applied Physics, 2002, vol. 41, no. 6A, L622–L625.
- T. Harwig, F. Kellendonk, S. Slappendel. The ultraviolet luminescence of β-galliumsesquioxide, Journal of Physics and Chemistry of Solids, 1978, vol. 39, no. 6, pp. 675–680.
- J.B. Varley, A. Janotti, C. Franchini, C.G. Van De Walle, Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides, Physical Review B, 2012, vol. 85, no. 8, art. no. 081109.
- V. Vasyltsiv, L. Kostyk, O. Tsvetkova, R. Lys, M. Kushlyk, B. Pavlyk, A. Luchechko, Luminescence and conductivity of β-Ga2O3 and β-Ga2O3:Mg single crystals, Acta Physica Polonica A, 2022, vol. 141, no. 4, pp. 312–318.
- T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, T. Honda, Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystal, Applied Physics Letters, 2013, vol. 103, no. 4, art. no. 041910.
- S.J. Pearton, J. Yang, P.H. Cary, F. Ren, J. Kim, M.J. Tadjer, M.A. Mastro, A review of Ga2O3 materials, processing, and devices, Applied Physics Reviews, 2018, vol. 5, no. 1, art. no. 011301.
- M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, S. Yamakoshi, Recent progress in Ga2O3 power devices, Semiconductor Science and Technology, 2016, vol. 31, no. 3, art. no. 034001.
- M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, S. Yamakoshi, Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates, Applied Physics Letters, 2012, vol. 100, no. 1, art. no. 013504.
- K. Sasaki, A. Kuramata, T. Masui, E.G. Víllora, K. Shimamura, S. Yamakoshi, Device-quality β-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy, Applied Physics Express, 2012, vol. 5, no. 3, art. no. 035502.
- Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, T. Luo, Anisotropic thermal conductivity in single crystal β-gallium oxide, Applied Physics Letters, 2015, vol. 106, no. 11, art. no. 111909.
- K. Adachi, H. Ogi, N. Takeuchi, N. Nakamura, H. Watanabe, T. Ito, Y. Ozaki, Unusual elasticity of monoclinic β−Ga2O3, Journal of Applied Physics, 2018, vol. 124, no. 8, art. no. 085102.
- S. Luan, L. Dong, R. Jia, Analysis of the structural, anisotropic elastic and electronic properties of β-Ga2O3 with various pressures, Journal of Crystal Growth, 2019, vol. 505, pp. 74–81.
- S.S. Kistler, Coherent expanded aerogels and jellies, Nature, 1931, vol. 127, no. 3211, pp. 741.
- S. Sakka, History of the sol-gel chemistry and technology, in: Handbook of sol-gel science and technology, ed. by L. Klein, M. Aparicio, A. Jitianu, Springer, Cham, 2018, pp. 3–29.
- Y. Dimitriev, Y. Ivanova, R. Iordanova, History of sol-gel science and technology, Journal of the University of Chemical Technology and Metallurgy, 2008, vol. 43, no. 2, pp. 181–192.
- M. Yada, H. Takenaka, M. Machida, T. Kijima, Mesostructured gallium oxides templated by dodecyl sulfate assemblies, Journal of the Chemical Society, Dalton Transactions, 1998, no. 10, pp. 1547–1550.
- L.L. Hench, J.K. West, The sol-gel process, Chemical Reviews, 1990, vol. 90, no. 1, pp. 33–72.
- Q. Liu, Preparation of NiO thin film by sol-gel spin coating method and its light transmission properties, Diss. Liaoning Normal University.
- Y. Liu, GaO reaction self-assembly to form GaN particles prepared by sol-gel method, Diss. Shandong Normal University.
- A. Mohammadzadeh, S.K. Naghib Zadeh, M.H. Saidi, M. Sharifzadeh, Chapter 3 – Mechanical engineering of solid oxide fuel cell systems: geometric design, mechanical configuration, and thermal analysis, in: Design and Operation of Solid Oxide Fuel Cells, Woodhead Publishing Series in Energy, Academic Press, 2020, pp. 85–130.
- T. Minami, T. Shirai, T. Nakatani, T. Miyata, Electroluminescent devices with Ga2O3:Mn thin-film emitting layer prepared by sol-gel process, Japanese Journal of Applied Physics, 2000, vol. 39, no. 6A, L524–L526.
- M.R. Mohammadi, D.J. Fray, Semiconductor TiO2–Ga2O3 thin film gas sensors derived from particulate sol–gel route, Acta Materialia, 2007, vol. 55, no. 13, pp. 4455–4466.
- G. Sinha, A. Datta, S.K. Panda, P.G. Chavan, M.A More, D.S. Joag, A. Patra, Self-catalytic growth and field-emission properties of Ga2O3 nanowires, Journal of Physics D: Applied Physics, 2009, vol. 42, no. 18, art. no. 185409.
- X. Li, D. Bi, C. Yi, J. Decoppet, J. Luo, S. Zakeeruddin, A. Hagfeldt, M. Gratzel, A vacuum flash-assisted solution process for high-efficiency large-area perovskite solar cells, Science, 2016, vol. 353, no. 6294, pp. 58–62.
- Y. Kokubun, K. Miura, F. Endo, S. Nakagomi, Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors, Applied Physics Letters, 2007, vol. 90, no. 3, art. no. 031912.
- M. Fleischer, W. Hanrieder, H. Meixner, Stability of semiconducting gallium oxide thin films, Thin Solid Films, 1990, vol. 190, no. 1, pp. 93–102.
- G.A. Battiston, R. Gerbasi, M. Porchia, R. Bertoncello, F. Caccavale, Chemical vapour deposition and characterization of gallium oxide thin films, Thin Solid Films, 1996, vol. 279, no. 1–2, pp. 115–118.
- H. Shen, Y. Yin, K. Tian, K. Baskaran, L. Duan, X. Zhao, A. Tiwari, Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors, Journal of Alloys and Compounds, 2018, vol. 766, pp. 601–608.
- Y. Li, A. Trinchi, W. Wlodarski, K. Galatsis, K. Kalantar-zadeh, Investigation of the oxygen gas sensing performance of Ga2O3 thin films with different dopants, Sensors and Actuators B: Chemical, 2003, vol. 93, no. 1–3, pp. 431–434.
- J.P. Sawant, H.M. Pathan, R.B. Kale, Spray pyrolytic deposition of CuInS2 thin films: properties and applications, Engineered Science, 2021, vol. 13, pp. 51–64.
- P.S. Patil, Versatility of chemical spray pyrolysis technique, Materials Chemistry and Physics, 1999, vol. 59, no. 3, pp. 185–198.
- S.P.S Arya, H.E Hintermann, Growth of Y-Ba-Cu-O superconducting thin films by ultrasonic spray pyrolysis, Thin Solid Films, 1990, vol. 193–194, pp. 841–846.
- C. Chen, Electrostatic spray deposition of thin layers of cathode materials for lithium battery, Solid State Ionics, 1996, vol. 86–88, pp. 1301–1306.
- G. Gan, Y. Guo, Sol-gel film preparation process and its application, Journal of Kunming University of Science and Technology, 1997, vol. 22, no. 1, pp. 142–145.
- D.I. Panov, X. Zhang, V.A. Spiridonov, L.V. Azina, R.K. Nuryev, N.D. Prasolov, L.A. Sokura, D.A. Bauman, V.E. Bougrov, A.E. Romanov, Thin films of gallium oxide obtained by spray-pyrolysis: method and properties, Materials Physics and Mechanics, 2022, vol. 50, no. 1, pp. 107–117.
- J. Park, S. Lee, H.H. Lee, High-mobility polymer thin-film transistors fabricated by solvent-assisted drop-casting, Organic Electronics, 2006, vol. 7, no. 5, pp. 256–260.
- A.A.M. Farag, I.S. Yahia, Structural, absorption and optical dispersion characteristics of rhodamine b thin films prepared by drop casting technique, Optics Communications, 2010, vol. 283, no. 21, pp. 4310–4317.
- R. Pilliadugula, N.G. Krishnan, Effect of pH dependent morphology on room temperature NH3 sensing performances of β-Ga2O3, Materials Science in Semiconductor Processing, 2020, vol. 112, art. no. 105007.
- V. Balasubramani, A. Nowshath Ahamed, S. Chandraleka, K. Krishna Kumar, M.R. Kuppusamy, T.M. Sridhar, Highly sensitive and selective H2S gas sensor fabricated with β-Ga2O3 /rGO, ECS Journal of Solid State Science and Technology, 2020, vol. 9, no. 5, art. no. 055009.
- M. Ristić, S. Popović, S. Musić, Application of sol–gel method in the synthesis of gallium(III)-oxide, Materials Letters, 2005, vol. 59, no. 10, pp. 1227–1233.
- Y. Hou, L. Wu, X. Wang, Z. Ding, Z. Li, X. Fu, Photocatalytic performance of α-, β-, and γ-Ga2O3 for the destruction of volatile aromatic pollutants in air, Journal of Catalysis, 2007, vol. 250, no. 1, pp. 12–18.
- X. Wang, Q. Xu, F. Fan, X. Wang, M. Li, Z. Feng, C. Li, Study of the phase transformation of single particles of Ga2O3 by UV-Raman spectroscopy and high-resolution TEM, Chemistry – An Asian Journal, 2013, vol. 8, no. 9, pp. 2189–2195.
- C.O. Areán, A.L. Bellan, M.P. Mentruit, M.R. Delgado, G.T. Palomino, Preparation and characterization of mesoporous γ-Ga2O3, Microporous and Mesoporous Materials, 2000, vol. 40, no. 1–3, pp. 35–42.
- M.R. Delgado, C.O. Areán, Surface chemistry and pore structure of β-Ga2O3, Materials Letters, 2003, vol. 57, no. 15, pp. 2292–2297.
- M. Hirano, K. Sakoda, Y. Hirose, Direct formation and phase stability of luminescent γ-Ga2O3 spinel nanocrystals via hydrothermal method, Journal of Sol-Gel Science and Technology, 2016, vol. 77, no. 2, pp. 348–354.
- Y. Zhao, R.L. Frost, W.N. Martens, Synthesis and characterization of gallium oxide nanostructures via a soft-chemistry route, The Journal of Physical Chemistry C, 2007, vol. 111, no. 44, pp. 16290–16299.
- X. Chai, Z. Liu, Y. Huang, Influence of PEG 6000 on gallium oxide (Ga2O3) polymorphs and photocatalytic properties, Science China Chemistry, 2015, vol. 58, no. 3, pp. 532–538.
- I.M. Sosnin, L.A. Sokura, M.V. Dorogov, I.G. Smirnova, A.E. Romanov, Aqueous solution synthesis and size control of acid-resistant β-Ga2O3 microparticles, Materials Letters, 2023, vol. 335, art. no. 133758.
- M. Jędrzejczyk, K. Zbudniewek, J. Rynkowski, V. Keller, J. Grams, A.M. Ruppert, N. Keller, Wide band gap Ga2O3 as efficient UV-C photocatalyst for gas-phase degradation applications, Environmental Science and Pollution Research, 2017, vol. 24, no. 34, pp. 26792–26805.
- D. Zhang, W. Zheng, R.C. Lin, T.T. Li, Z.J. Zhang, F. Huang, High quality β-Ga2O3 film grown with N2O for high sensitivity solar-blind-ultraviolet photodetector with fast response speed, Journal of Alloys and Compounds, 2018, vol. 735, pp. 150–154.
- Z. Ji, J. Du, J. Fan, W. Wang, Gallium oxide films for filter and solar-blind UV detector, Optical Materials, 2006, vol. 28, no. 4, pp. 415–417.
- M. Fleischer, H. Meixner, Gallium oxide thin films: A new material for high-temperature oxygen sensors, Sensors and Actuators B: Chemical, 1991, vol. 4, no. 3–4, pp. 437–441.
- B. Zhao, F. Wang, H. Chen, L. Zheng, L. Su, D. Zhao, X. Fang, An ultrahigh responsivity (9.7 mA W−1 ) self-powered solar-blind photodetector based on individual ZnO–Ga2O3 heterostructures, Advanced Functional Materials, 2017, vol. 27, no. 17, art. no. 1700264.
- X. Wang, J. Situ, X. Ying, H. Chen, H. Pan, Y. Jin, Y. Du, β-Ga2O3:Cr3+ nanoparticle: A new platform with near infrared photoluminescence for drug targeting delivery and bio-imaging simultaneously, Acta Biomaterialia, 2015, vol. 22, pp. 164–172.
- W. Zhao, Y. Yang, R. Hao, F. Liu, Y. Wang, M. Tan, J. Tang, D. Ren, D. Zhao, Synthesis of mesoporous β-Ga2O3 nanorods using PEG as template: preparation, characterization and photocatalytic properties, Journal of Hazardous Materials, 2011, vol. 192, no. 3, pp. 1548–1554.
- S. Kim, H. Ryou, I.G. Lee, M. Shin, B.J. Cho, W.S. Hwang, Impact of Al doping on a hydrothermally synthesized β-Ga2O3 nanostructure for photocatalysis applications, RSC Advances, 2021, vol. 11, no. 13, pp. 7338–7346.
- K. Girija, S. Thirumalairajan, A.K. Patra, D. Mangalaraj, N. Ponpandian, C. Viswanathan, Enhanced photocatalytic performance of novel self-assembled floral β-Ga2O3 nanorods, Current Applied Physics, 2013, vol. 13, no. 4, pp. 652–658.
- R. Pilliadugula, N.G. Krishnan, Gas sensing performance of GaOOH and β-Ga2O3 synthesized by hydrothermal method: a comparison, Materials Research Express, 2018, vol. 6, no. 2, art. no. 025027.
- B. Zhang, H. Lin, H. Gao, X. Lu, C. Nam, P. Gao, Perovskite-sensitized β-Ga2O3 nanorod arrays for highly selective and sensitive NO2 detection at high temperature, Journal of Materials Chemistry A, 2020, vol. 8, no. 21, pp. 10845–10854.
- M. Fleischer, H. Meixner, Oxygen sensing with long-term stable Ga2O3 thin films, Sensors and Actuators B: Chemical, 1991, vol. 5, no. 1–4, pp. 115–119.
Том 5, № 2
Страницы 10-24
Файлы
История
Поступила в редакцию:
29
Мая
2023
Принята:
10
Июня
2023
Доступна онлайн:
30
Июня
2023
© 2023 ITMO University.
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license