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Фотолюминесценция теллуридов кадмия-ртути – историческая ретроспектива. Часть II: 2004–2022
Авторы
M.S. Ruzhevich 1 , K.D. Mynbaev 1, 21 Институт перспективных систем передачи данных, Университет ИТМО, Кронверкский пр., 49, литер А, Санкт-Петербург, 197101, Россия
2 Department of Solid-State Physics, Ioffe Institute, Politekhnicheskaya ul., 26, Saint-Petersburg 194021, Russia
Rev. Adv. Mater. Technol., 2022, vol. 4, no. 4, pp. 17–38
Аннотация
Настоящая статья является второй частью обзора, в котором рассматривается историческая ретроспектива исследований фотолюминесценции в теллуридах кадмия-ртути (HgCdTe), одном из важнейших материалов инфракрасной фотоэлектроники. Во второй части обзора рассматриваются результаты исследований, выполненных в 2004-2022 гг. Эти исследования проводились в основном на пленках, выращенных методом молекулярно-лучевой эпитаксии, и были сосредоточены на изучении дефектов, особенно тех, которые формируются при легировании HgCdTeматериала в р-тип проводимости вакансиями ртути или атомами мышьяка. Предметами исследований также были однородность состава и флуктуации состава твердого раствора в HgCdTe.
Ключевые слова
теллуриды кадмия-ртути; люминесценция; дефекты; флуктуации состава твердого раствораФинансирование
Министерство науки и высшего образования Российской Федерации: соглашение № 075‐15‐2021‐1349
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Metadata is available under the terms of the CC BY 4.0 license