ISSN 2687-0568

Early Attainments of Porous Silicon Carbide Technology: a Bibliographic Digest

Авторы
M.G. Mynbaeva 1

1 Ioffe Institute, 26 Politekhnicheskaya, St. Petersburg 194021, Russian Federation

Adv. Mater. Technol., 2021, vol. 3, no. 2, pp. 27–38
Аннотация

This work presents a bibliographic review on a promising functional material - porous silicon carbide (PSC). The work reviews selected sources, which describe the main achievements that formed the technological basis for PSC yet in the first decade of the 2000s, but were often ignored in the later research and publications. It is expected that this selection would be useful for specialists in semiconductor physics, engineers, and technologists working in this field.

Ссылки
Том 3, № 2
Страницы 27-38
История
© 2021 ITMO University.
This is an open access article under the terms
of the CC BY-NC 4.0 license.
Metadata is available under the terms of the CC BY 4.0 license