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Current State of Ga2O3-Based Electronic and Optoelectronic
Devices. Brief Review
Авторы
А.А. Петренко 1 , Ya.N. Kovach 1 , D.A. Bauman 1 , M.A. Odnoblyudov 1, 2 , В.Е. Бугров 1 , А.Е. Романов 1, 31 Институт перспективных систем передачи данных, Университет ИТМО, Кронверкский пр., 49, литер А, Санкт-Петербург, 197101, Россия
2 Peter the Great St. Petersburg State Polytechnic University, Politechnicheskaya 29,St. Petersburg 195251, Russia
3 Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, St. Petersburg, 194021, Russia
Adv. Mater. Technol., 2021, vol. 3, no. 2, pp. 1–26
Аннотация
In this review, we consider the main gallium oxide areas of application in electronics and optoelectronics with focus on power electronics devices (rectifiers, field effect transistors), solar-blind photodetectors, luminescent devices, gas sensors, spintronic and memory devices. As an introduction, we provide the valuable data on the basic physical properties of the existing Ga2O3 polymorphic modifications. We discuss device design based on various gallium oxide crystalline forms including those exploring Ga2O3 single crystals, thick layers, thin films, nanostructures, and Ga2O3-based heterostructures. Then, the information on the parameters and characteristics of electronic and optoelectronic devices based on gallium oxide is presented. In addition, recently emerging and requiring additional research Ga2O3 application fields such as photocatalysis and thermomechanical actuating, are briefly addressed.
Финансирование
Russian Science Foundation: project No. 19-19-00686.
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Том 3, № 2
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This is an open access article under the terms
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Metadata is available under the terms of the CC BY 4.0 license